toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Part Number | TK7J90E,S1E |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 3.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V TO-3PN
In Stock: 88
