Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Single 2SA1013-O,T6MIBF(J

Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J

Part Number
2SA1013-O,T6MIBF(J
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PNP 1A 160V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Single
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 4450 pcs
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Product Parameter
Part Number 2SA1013-O,T6MIBF(J
Part Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V
Power - Max 900mW
Frequency - Transition 50MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92L
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