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| Part Number | EMD4DXV6T1G |
|---|---|
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47k, 10k |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
Manufacturer: ON Semiconductor
Description: TRANS PREBIAS NPN/PNP SOT563
In Stock: 60000
Manufacturer: ON Semiconductor
Description: TRANS PREBIAS NPN/PNP SOT563
In Stock: 120000
