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| Part Number | PMFPB6532UP,115 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 520mW (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 1A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2020-6 |
| Package / Case | 6-UDFN Exposed Pad |
Manufacturer: NXP USA Inc.
Description: MOSFET P-CH 20V 3.5A SOT1118
In Stock: 0
Manufacturer: NXP USA Inc.
Description: MOSFET P-CH 20V 3.5A SOT1118
In Stock: 0
Manufacturer: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
In Stock: 3000
Manufacturer: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
In Stock: 0
