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NXP USA Inc. PHD16N03T,118

Part Number
PHD16N03T,118
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 30V 13.1A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
NXP Semiconductors

NXP Semiconductors

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In Stock 4083 pcs
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Product Parameter
Part Number PHD16N03T,118
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 32.6W (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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