Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased PBRN113EK,115

NXP USA Inc. PBRN113EK,115

Part Number
PBRN113EK,115
Manufacturer
NXP USA Inc.
Description
TRANS PREBIAS NPN 250MW SMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
NXP Semiconductors

NXP Semiconductors

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In Stock 3944 pcs
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Product Parameter
Part Number PBRN113EK,115
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 40V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3; MPAK
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