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| Part Number | BUK7E1R6-30E,127 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11960pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A I2PAK
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Manufacturer: NXP USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
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Manufacturer: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
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Manufacturer: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
In Stock: 1000
