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| Part Number | FQI8N60CTU |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 600V 7.5A I2PAK
In Stock: 984
