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| Part Number | FQB34P10TM_F085 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 16.75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 200V 31A D2PAK
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Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 200V 31A D2PAK
In Stock: 0
Manufacturer: Fairchild/ON Semiconductor
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