epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Part Number | EPC2104ENG |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
Manufacturer: EPC
Description: TRANS GAN 200V 22A BUMPED DIE
In Stock: 0
