epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Part Number | EPC2010CENGR |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 100V |
| Vgs (Max) | +6V, -4V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 12A, 5V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die Outline (7-Solder Bar) |
| Package / Case | Die |
Manufacturer: EPC
Description: TRANS GAN 200V 22A BUMPED DIE
In Stock: 0
