rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numero di parte | SH8M13GZETB |
|---|---|
| Stato parte | Active |
| Tipo FET | N and P-Channel |
| Caratteristica FET | - |
| Drain to Source Voltage (Vdss) | 30V |
| Corrente - Scarico continuo (Id) @ 25 ° C | 6A, 7A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 7A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Capacità di ingresso (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Potenza - Max | 2W |
| temperatura di esercizio | 150°C (TJ) |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | 8-SOIC (0.154", 3.90mm Width) |
| Pacchetto dispositivo fornitore | 8-SOP |
fabbricante: Rohm Semiconductor
Descrizione: MIDDLE POWER MOSFET SERIES (DUAL
Disponibile: 0
fabbricante: Rohm Semiconductor
Descrizione: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Disponibile: 0
