rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Numero di parte | BSM080D12P2C008 |
|---|---|
| Stato parte | Active |
| Tipo FET | 2 N-Channel (Dual) |
| Caratteristica FET | Standard |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Corrente - Scarico continuo (Id) @ 25 ° C | 80A |
| Rds On (Max) @ Id, Vgs | - |
| Vgs (th) (Max) @ Id | 4V @ 13.2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Capacità di ingresso (Ciss) (Max) @ Vds | 800pF @ 10V |
| Potenza - Max | 600W |
| temperatura di esercizio | 175°C (TJ) |
| Tipo di montaggio | Chassis Mount |
| Pacchetto / caso | Module |
| Pacchetto dispositivo fornitore | Module |
fabbricante: Rohm Semiconductor
Descrizione: SIC POWER MODULE-1200V-80A
Disponibile: 4
