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| Numéro d'article | TK4R3A06PL,S4X |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 60V |
| Courant - Drain continu (Id) @ 25 ° C | 68A |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 500µA |
| Charge de porte (Qg) (Max) @ Vgs | 48.2nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 3280pF @ 30V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 36W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 15A, 4.5V |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | TO-220SIS |
| Paquet / cas | TO-220-3 Full Pack |
Fabricant: Toshiba Semiconductor and Storage
La description: X35 PB-F POWER MOSFET TRANSISTOR
En stock: 660
Fabricant: Toshiba Semiconductor and Storage
La description: X35 PB-F POWER MOSFET TRANSISTOR
En stock: 757
