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| Numéro d'article | T2N7002BK,LM |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 60V |
| Courant - Drain continu (Id) @ 25 ° C | 400mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.1V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 40pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 320mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 100mA, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | SOT-23-3 |
| Paquet / cas | TO-236-3, SC-59, SOT-23-3 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 60V 0.2A
En stock: 6000
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 60V 0.4A SOT23
En stock: 9000
