provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Numéro d'article | JANTXV2N6301 |
|---|---|
| État de la pièce | Discontinued at Digi-Key |
| Type de transistor | PNP - Darlington |
| Courant - Collecteur (Ic) (Max) | 8A |
| Tension - Panne d'émetteur collecteur (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Courant - Coupure du collecteur (Max) | 500µA |
| Gain de courant CC (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Puissance - Max | 75W |
| Fréquence - Transition | - |
| Température de fonctionnement | -55°C ~ 200°C (TJ) |
| Type de montage | Through Hole |
| Paquet / cas | TO-213AA, TO-66-2 |
| Package de périphérique fournisseur | TO-66 |
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 100V 35A DO5
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 100V 35A DO203AB
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 35A DO5
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 35A DO203AB
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 600V 35A DO5
En stock: 87
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 600V 35A DO5
En stock: 100
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 12A DO203AA
En stock: 39
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 12A DO203AA
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 12A DO203AA
En stock: 36
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 12A DO203AA
En stock: 4
