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| Numéro d'article | 1N8031-GA |
|---|---|
| État de la pièce | Active |
| Type de diode | Silicon Carbide Schottky |
| Tension - DC Reverse (Vr) (Max) | 650V |
| Courant - Rectifié moyen (Io) | 1A |
| Tension - Avant (Vf) (Max) @ Si | 1.5V @ 1A |
| La vitesse | No Recovery Time > 500mA (Io) |
| Temps de récupération inverse (trr) | 0ns |
| Courant - Fuite inverse @ Vr | 5µA @ 650V |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Type de montage | Through Hole |
| Paquet / cas | TO-276AA |
| Package de périphérique fournisseur | TO-276 |
| Température de fonctionnement - Jonction | -55°C ~ 250°C |
