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| Numéro d'article | FCU5N60TU |
|---|---|
| État de la pièce | Not For New Designs |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 600V |
| Courant - Drain continu (Id) @ 25 ° C | 4.6A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 16nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 600pF @ 25V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 54W (Tc) |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.3A, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | I-Pak |
| Paquet / cas | TO-251-3 Short Leads, IPak, TO-251AA |
Fabricant: Fairchild/ON Semiconductor
La description: MOSFET N-CH 800V 2.6A IPAK
En stock: 1560
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La description: MOSFET N-CH 800V 2A IPAK
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La description: MOSFET N-CH 800V 1.6A IPAK
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La description: MOSFET N-CH 800V 6A IPAK
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La description: MOSFET N CH 600V 4.5A IPAK
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Fabricant: Murata Electronics North America
La description: FIXED IND 470NH 16A 2.85 MOHM
En stock: 0
