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| Numero de parte | PMGD8000LN,115 |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 125mA |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
| Vgs (th) (Max) @ Id | 1.5V @ 100µA |
| Carga de puerta (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 18.5pF @ 5V |
| Potencia - Max | 200mW |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 6-TSSOP, SC-88, SOT-363 |
| Paquete de dispositivo del proveedor | 6-TSSOP |
Fabricante: NXP USA Inc.
Descripción: MOSFET 2N-CH 30V 0.125A 6TSSOP
En stock: 0
