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| Part Number | TRS8E65C,S1Q |
|---|---|
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 90µA @ 650V |
| Capacitance @ Vr, F | 44pF @ 650V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
Manufacturer: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 650V 8A TO220-2L
In Stock: 2
