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| Part Number | APTML10UM09R004T1AG |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 154A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 69.5A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP1 |
| Package / Case | SP1 |
Manufacturer: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 20A SP3
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Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 20A SP1
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Manufacturer: Microsemi Corporation
Description: MOSFET 2N-CH 100V 154A SP3
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Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 100V 154A SP1
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