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| Artikelnummer | TK20C60W,S1VQ |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 600V |
| Strom - Dauerablass (Id) @ 25 ° C | 20A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 3.7V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 48nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1680pF @ 300V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 165W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 155 mOhm @ 10A, 10V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | I2PAK |
| Paket / Fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 600V 20A I2PAK
Auf Lager: 38
