rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Artikelnummer | SH8M4TB1 |
|---|---|
| Teilstatus | Not For New Designs |
| FET Typ | N and P-Channel |
| FET-Eigenschaft | Logic Level Gate |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 9A, 7A |
| Rds Ein (Max) @ Id, Vgs | 18 mOhm @ 9A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 15nC @ 5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Leistung max | 2W |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
| Lieferantengerätepaket | 8-SOP |
Hersteller: Rohm Semiconductor
Beschreibung: 60V PCH+PCH MIDDLE POWER MOSFET
Auf Lager: 0
