rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Artikelnummer | RYC002N05T316 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 50V |
| Strom - Dauerablass (Id) @ 25 ° C | 200mA (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V |
| Vgs (th) (Max) @ Id | 800mV @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 26pF @ 10V |
| Vgs (Max) | ±8V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 350mW (Tc) |
| Rds Ein (Max) @ Id, Vgs | 2.2 Ohm @ 200mA, 4.5V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | SST3 |
| Paket / Fall | TO-236-3, SC-59, SOT-23-3 |
Hersteller: Rohm Semiconductor
Beschreibung: 0.9V DRIVE NCH SILICON MOSFET
Auf Lager: 0
