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| Artikelnummer | PMN55LN,135 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 20V |
| Strom - Dauerablass (Id) @ 25 ° C | 4.1A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 13.1nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 500pF @ 20V |
| Vgs (Max) | ±15V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 1.75W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 65 mOhm @ 2.5A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | 6-TSOP |
| Paket / Fall | SC-74, SOT-457 |
Hersteller: Nexperia USA Inc.
Beschreibung: MOSFET P-CH 20V 3.6A 6TSOP
Auf Lager: 0
