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| Part Number | TPN22006NH,LQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6.5V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 4.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 9A 8-TSON
In Stock: 0
