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Part Number | TK39N60W5,S1VF |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 270W (Tc) |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 19.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
In Stock: 89
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Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO-247
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