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| Part Number | TK17E80W,S1X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 850µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 300V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 8.5A, 10V |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 17A TO220-3
In Stock: 395
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Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 17A TO220-3
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Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A T0247
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