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| Part Number | TK10A50D(STA4,Q,M) |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 720 mOhm @ 5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 10A TO-220SIS
In Stock: 0
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 10A TO-220SIS
In Stock: 0
