Home Product Index Discrete Semiconductor Transistors - FETs, MOSFETs - Single TK100E10N1,S1X

Toshiba Semiconductor and Storage TK100E10N1,S1X

Part Number
TK100E10N1,S1X
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 100V 100A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 5205 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    2.00000/pcs
  • 50 pcs

    1.60880/pcs
  • 100 pcs

    1.46575/pcs
  • 500 pcs

    1.18690/pcs
  • 1,000 pcs

    1.00100/pcs
Total:2.00000/pcs Unit Price:
2.00000/pcs
Target price:
Quantity:
Product Parameter
Part Number TK100E10N1,S1X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 255W (Tc)
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 50A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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