provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | JANTX2N5663 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 5V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 87
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 100
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 39
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 36
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 4
