Part Number | JANTX1N5807US |
---|---|
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 87
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 100
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 39
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 36
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 4