provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | JAN2N6676 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3A, 15A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 3V |
| Power - Max | 6W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-204AA (TO-3) |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 0
