| Part Number | JAN2N3740 |
|---|---|
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 1V |
| Power - Max | 25W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 0