Part Number | JAN1N6643 |
---|---|
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 300mA |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 6ns |
Current - Reverse Leakage @ Vr | 500nA @ 75V |
Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | D, Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -65°C ~ 175°C |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 0