Part Number | APT9F100B |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2606pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 337W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 [B] |
Package / Case | TO-247-3 |
Manufacturer: Microsemi Corporation
Description: DIODE SIC SCHOTTKY 600V SOT227
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 10.5A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 11A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
In Stock: 14
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1KV 8A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
In Stock: 3
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
In Stock: 0