Part Number | SI2312-TP |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5A |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 350mW |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 4.3A, 1.8V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
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