Part Number | IXTH10N100D2 |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 5320pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 695W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
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