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| Part Number | FQD4P25TM_WS |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 1.55A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 200V 3.2A DPAK
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