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| Part Number | C3M0280090J |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 600V |
| Vgs (Max) | +18V, -8V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 7.5A, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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