Part Number | AOT12N60FD |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Manufacturer: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
In Stock: 1000
Manufacturer: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 10A TO220
In Stock: 1000
Manufacturer: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO-220
In Stock: 0
Manufacturer: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO-220
In Stock: 0