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Numéro d'article | TPC8125,LQ(S |
---|---|
État de la pièce | Active |
FET Type | P-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 30V |
Courant - Drain continu (Id) @ 25 ° C | 10A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (th) (Max) @ Id | 2V @ 500µA |
Charge de porte (Qg) (Max) @ Vgs | 64nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 2580pF @ 10V |
Vgs (Max) | +20V, -25V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 5A, 10V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Surface Mount |
Package de périphérique fournisseur | 8-SOP |
Paquet / cas | 8-SOIC (0.154", 3.90mm Width) |
Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 7.02VWM 12.1VC SMPC
En stock: 0
Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 7.02VWM 12.1VC SMPC
En stock: 0
Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 12.1VC 124A TO277A
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Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 12.1VC 124A TO277A
En stock: 0
Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 6.63VWM 12.5VC SMPC
En stock: 0
Fabricant: Vishay Semiconductor Diodes Division
La description: TVS DIODE 6.63VWM 12.5VC SMPC
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 200V 1.8A 8-SOP
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 11A SOP8 2-6J1B
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 18A SOP8 2-6J1B
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 11A SOP8 2-6J1B
En stock: 0