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Numéro d'article | TK10A55D(STA4,Q,M) |
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État de la pièce | Active |
FET Type | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 550V |
Courant - Drain continu (Id) @ 25 ° C | 10A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Charge de porte (Qg) (Max) @ Vgs | 24nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | ±30V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 5A, 10V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-220SIS |
Paquet / cas | TO-220-3 Full Pack |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 500V 10A TO-220SIS
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 550V 10A TO-220SIS
En stock: 0