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| Numéro d'article | IPD50R380CEATMA1 |
|---|---|
| État de la pièce | Obsolete |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 500V |
| Courant - Drain continu (Id) @ 25 ° C | 9.9A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 13V |
| Vgs (th) (Max) @ Id | 3.5V @ 260µA |
| Charge de porte (Qg) (Max) @ Vgs | 24.8nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 584pF @ 100V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 98W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 13V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | PG-TO252-3 |
| Paquet / cas | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Fabricant: Infineon Technologies
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Fabricant: Infineon Technologies
La description: CONSUMER
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Fabricant: Infineon Technologies
La description: MOSFET N CH 500V 9.9A PG-TO252
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La description: MOSFET N CH 500V 9.9A PG-TO252
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