diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numéro d'article | DMC1229UFDB-13 |
|---|---|
| État de la pièce | Active |
| FET Type | N and P-Channel |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 12V |
| Courant - Drain continu (Id) @ 25 ° C | 5.6A, 3.8A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5A, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 19.6nC @ 8V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 914pF @ 6V |
| Puissance - Max | 1.4W |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 6-UDFN Exposed Pad |
| Package de périphérique fournisseur | U-DFN2020-6 (Type B) |
Fabricant: Diodes Incorporated
La description: MOSFET N/P-CH 12V U-DFN2020-6
En stock: 0
Fabricant: Diodes Incorporated
La description: MOSFET N/P-CH 12V U-DFN2020-6
En stock: 0
