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| Part Number | TK6Q60W,S1VQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 310µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 820 mOhm @ 3.1A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Stub Leads, IPak |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 6.2A IPAK
In Stock: 0
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A IPAK-OS
In Stock: 375
