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| Part Number | TK31J60W,S1VQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 230W (Tc) |
| Rds On (Max) @ Id, Vgs | 88 mOhm @ 15.4A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 30.8A TO-3P(N)
In Stock: 47
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO-3P(N)
In Stock: 0
