Infineon Technologies IPP041N12N3 G

Part Number: IPP041N12N3 G
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 120V 120A TO220-3
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Family: Transistors - FETs, MOSFETs - Single

Infineon Technologies

hotenda.cn is an authorized distributor of infineon technologies, formerly siemens semiconductors, products including fets, bjts, voltage regulators and more.

In Stock 1885 pcs

Reference Price
(In US Dollars)
1 pcs
2.81500/pcs
10 pcs
2.65650/pcs
100 pcs
2.17835/pcs
500 pcs
1.76392/pcs
1,000 pcs
1.48764/pcs

Total:2.81500/pcs

Unit Price:

2.81500/pcs

Target price:

Quantity:

Product Parameter

Part Number	IPP041N12N3 G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO-220-3
Package / Case	TO-220-3