toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Artikelnummer | TPCC8A01-H(TE12LQM |
---|---|
Teilstatus | Obsolete |
FET Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain auf Source-Spannung (Vdss) | 30V |
Strom - Dauerablass (Id) @ 25 ° C | 21A (Ta) |
Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 1mA |
Gate Ladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 1900pF @ 10V |
Vgs (Max) | ±20V |
FET-Eigenschaft | - |
Verlustleistung (Max) | 700mW (Ta), 30W (Tc) |
Rds Ein (Max) @ Id, Vgs | 9.9 mOhm @ 10.5A, 10V |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Lieferantengerätepaket | 8-TSON |
Paket / Fall | 8-VDFN Exposed Pad |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 30V 21A SBD 8TSON
Auf Lager: 0