nexperia is a dedicated global leader in small signal discretes, logic and powermos devices. originally part of philips and more recently nxp, this new company became independent at the beginning of 2017.
| Artikelnummer | PHT4NQ10T,135 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 100V |
| Strom - Dauerablass (Id) @ 25 ° C | 3.5A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 7.4nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 300pF @ 25V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 6.9W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 250 mOhm @ 1.75A, 10V |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | SOT-223 |
| Paket / Fall | TO-261-4, TO-261AA |
Hersteller: Nexperia USA Inc.
Beschreibung: MOSFET N-CH 100V 3.5A SOT223
Auf Lager: 0
